PART |
Description |
Maker |
STB15NM60N STI15NM60N STP15NM60N STF/I15NM60N STF1 |
N-channel 600V - 0.270ヘ - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh⑩ Power MOSFET N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.270楼? - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh垄芒 Power MOSFET
|
STMicroelectronics
|
HGTP7N60C3 HGTD7N60C3S HGTD7N60C3S9A |
14A,600V, UFS Series N-Channel IGBTs 14A, 600V, UFS Series N-Channel IGBTs
|
FAIRCHILD[Fairchild Semiconductor]
|
HGTP7N60C3D_05 HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60 |
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A) Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五(巴西)直|4A条(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
JANTXV2N6756 IRF130 JANTX2N6756 |
14 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A) TRANSISTORS N-CHANNEL(Vdss=100V/ Rds(on)=0.18ohm/ Id=14A)
|
IRF[International Rectifier]
|
APT14F100B APT14F100S |
N-Channel FREDFET 1000V, 14A, 1.00Ω Max, trr ?40ns N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns
|
Microsemi Corporation
|
HUF75823D3S HUF75823D3 |
14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET 14A 150V 0.150 Ohm N-Channel UltraFET Power MOSFET 14A, 150V, 0.150 Ohm, N-Channel, UltraFETPower MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics STMicroelectronics 意法半导
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
IRF646 FN2169 |
14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET From old datasheet system
|
INTERSIL[Intersil Corporation]
|
IRFY1310M-T257 |
N-Channel Power MOSFET For HI-REL Application(Vds:100V,Id(max):14A,Rds(on):0.055Ω)(N沟道功率MOS场效应管,HI-REL应用(Vds:100V,Id(max):14A,Rds(on):0.055Ω)) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
|